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IRFBA90N20DPBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFBA90N20DPBF
Description  HEXFET짰Power MOSFET
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFBA90N20DPBF Fiches technique(HTML) 2 Page - International Rectifier

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IRFBA90N20DPbF
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
41
–––
–––
S
VDS = 50V, ID = 59A
Qg
Total Gate Charge
–––
160
240
ID = 59A
Qgs
Gate-to-Source Charge
–––
45
67
nC
VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
–––
75
110
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
23
–––
VDD = 100V
tr
Rise Time
–––
160
–––
ID = 59A
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 1.2Ω
tf
Fall Time
–––
77
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
6080 –––
VGS = 0V
Coss
Output Capacitance
–––
1040 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
150
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
7500 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
410
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
790
–––
VGS = 0V, VDS = 0V to 160V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
960
mJ
IAR
Avalanche Current

–––
59
A
EAR
Repetitive Avalanche Energy

–––
65
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 59A, VGS = 0V
„
trr
Reverse Recovery Time
–––
220
340
nS
TJ = 25°C, IF = 59A
Qrr
Reverse RecoveryCharge
–––
1.9
2.8
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
98
390
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.22 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.023
VGS = 10V, ID = 59A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current


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