2N3960 datasheet(1/2 Pages) SEMICOA

No de pièce	2N3960

Description	Silicon NPN Transistor

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Fabricant	SEMICOA [Semicoa Semiconductor]

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Copyright

 2002

Semicoa Semiconductors, Inc.

Rev. D

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

2N3960

Silicon NPN Transistor

Data Sheet

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N3960J)

• JANTX level (2N3960JX)

• JANTXV level (2N3960JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Applications

• General purpose

• Low power switching transistor

• NPN silicon transistor

Features

• Hermetically sealed TO-18 metal can

• Also available in chip configuration

• Chip geometry 0003

• Reference document:

MIL-PRF-19500/399

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

Absolute Maximum Ratings

TC = 25°C unless otherwise specified

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage

VCEO

12

Volts

Collector-Base Voltage

VCBO

20

Volts

Emitter-Base Voltage

VEBO

4.5

Volts

Power Dissipation, TA = 25°C

Derate linearly above 25

°C

PT

400

2.3

mW

mW/

°C

Operating Junction Temperature

TJ

-65 to +200

°C

Storage Temperature

TSTG

-65 to +200

°C

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