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Moteur de recherche de fiches techniques de composants électroniques |
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IRF6714MTRPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF6714MTRPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6714MPbF 2 www.irf.com Pulse width ≤ 400µs; duty cycle ≤ 2% Notes: Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.6 2.1 ––– 2.6 3.4 VGS(th) Gate Threshold Voltage 1.4 1.9 2.4 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 122 ––– ––– S Qg Total Gate Charge ––– 29 44 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.1 ––– Qgd Gate-to-Drain Charge ––– 8.3 ––– Qgodr Gate Charge Overdrive ––– 8.1 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 12 ––– Qoss Output Charge ––– 23 ––– nC RG Gate Resistance ––– 1.2 2.2 Ω td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 26 ––– td(off) Turn-Off Delay Time ––– 13 ––– tf Fall Time ––– 9.6 ––– Ciss Input Capacitance ––– 3890 ––– Coss Output Capacitance ––– 1110 ––– Crss Reverse Transfer Capacitance ––– 490 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 26 39 ns Qrr Reverse Recovery Charge ––– 36 54 nC 112 234 ––– ––– ––– ––– nA µA m Ω VDS = VGS, ID = 100µA VGS = 4.5V, ID = 23A i VGS = 20V VGS = -20V VDS = 20V, VGS = 0V A nC ns pF di/dt = 200A/µs i TJ = 25°C, IS = 23A, VGS = 0V i showing the integral reverse p-n junction diode. TJ = 25°C, IF = 23A VGS = 0V VDS = 13V ID = 23A VDD = 13V, VGS = 4.5VÃi Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 29A i VDS = 13V VDS = 20V, VGS = 0V, TJ = 125°C VDS = 13V, ID = 23A MOSFET symbol RG = 1.8Ω, RD = 0.54Ω Conditions See Fig. 17 ƒ = 1.0MHz VDS = 16V, VGS = 0V VGS = 4.5V ID = 23A |
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