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CS1009GZ3 Fiches technique(PDF) 3 Page - ON Semiconductor |
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CS1009GZ3 Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 8 page CS1009 http://onsemi.com 3 MAXIMUM RATINGS* Rating Value Unit Reverse Current 20 mA Forward 10 mA Operating Temperature Range –40 to 105 °C Storage Temperature Range –65 to +150 °C Lead Temperature Soldering: Wave Solder (through hole styles only) (Note 1) Reflow: (SMD styles only) (Note 2) 260 peak 230 peak °C °C 1. 10 second maximum 2. 60 second maximum above 183 °C. *The maximum package power dissipation must be observed. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Reverse Breakdown Voltage IR = 1.0 mA 2.492 2.500 2.508 V Reverse Breakdown Voltage 0 °C ≤ TA ≤ 105°C 2.492 2.500 2.508 V Reverse Breakdown Voltage –40 °C ≤ TA ≤°C 2.480 2.500 2.508 V Reverse Breakdown Voltage Change with Current 400 µA ≤ IR ≤ 10 mA { – – 2.6 3.0 10 12 mV mV Reverse Dynamic Impedance IR = 1.0 mA { – – 0.2 0.4 1.0 1.4 Ω Ω Temperature Stability Avgerage Temperature Coefficient 0 °C ≤ TA ≤ 70°C, Note 3 0 °C ≤ TA ≤ 70°C, Note 3 – – – – – – mV ppm/ °C Long Term Stabilty TA = 25°C ±0.1 C, IR = 1.0 mA – 20 – ppm/kHr † Denotes the specifications which apply over full operating temperature range. 3. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. TYPICAL PERFORMANCE CHARACTERISTICS Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Change in Reverse Voltage vs. Reverse Current 0.5 1.0 1.4 1.8 2.2 2.6 0 4 812 16 20 10–5 10–4 10–3 10–2 10–1 TJ = 25°C REVERSE VOLTAGE (V) 0 1 2 3 4 5 REVERSE VOLTAGE (V) |
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