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CS1009GDR8 Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce CS1009GDR8
Description  2.5 Volt Reference
Download  8 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CS1009GDR8 Fiches technique(HTML) 3 Page - ON Semiconductor

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CS1009
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3
MAXIMUM RATINGS*
Rating
Value
Unit
Reverse Current
20
mA
Forward
10
mA
Operating Temperature Range
–40 to 105
°C
Storage Temperature Range
–65 to +150
°C
Lead Temperature Soldering:
Wave Solder (through hole styles only) (Note 1)
Reflow: (SMD styles only) (Note 2)
260 peak
230 peak
°C
°C
1. 10 second maximum
2. 60 second maximum above 183
°C.
*The maximum package power dissipation must be observed.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Reverse Breakdown Voltage
IR = 1.0 mA
2.492
2.500
2.508
V
Reverse Breakdown Voltage
0
°C ≤ TA ≤ 105°C
2.492
2.500
2.508
V
Reverse Breakdown Voltage
–40
°C ≤ TA ≤°C
2.480
2.500
2.508
V
Reverse Breakdown Voltage
Change with Current
400
µA ≤ IR ≤ 10 mA
{
2.6
3.0
10
12
mV
mV
Reverse Dynamic Impedance
IR = 1.0 mA
{
0.2
0.4
1.0
1.4
Temperature Stability
Avgerage Temperature Coefficient
0
°C ≤ TA ≤ 70°C, Note 3
0
°C ≤ TA ≤ 70°C, Note 3
mV
ppm/
°C
Long Term Stabilty
TA = 25°C ±0.1 C, IR = 1.0 mA
20
ppm/kHr
Denotes the specifications which apply over full operating temperature range.
3. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range.
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Change in Reverse Voltage vs.
Reverse Current
0.5
1.0
1.4
1.8
2.2
2.6
0
4
812
16
20
10–5
10–4
10–3
10–2
10–1
TJ = 25°C
REVERSE VOLTAGE (V)
0
1
2
3
4
5
REVERSE VOLTAGE (V)


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