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TIP127 Fiches technique(PDF) 2 Page - Diotec Semiconductor |
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TIP127 Fiches technique(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page TIP125 ... TIP127 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2) - IC = 3 A, IB = 12 mA - IC = 5 A, IB = 20 mA - VCEsat - VCEsat – – – – 2 V 4 V Base-Emitter voltage – Basis-Emitter-Spannung 2) - IC = 3 A, - VCE = 3 V - VBE – – 2.5 V Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 30 V, (B open) - VCE = 40 V, (B open) - VCE = 50 V, (B open) TIP125 TIP126 TIP127 - ICEO - ICEO - ICEO – – – – – – 500 nA 500 nA 500 nA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 60 V, (E open) - VCB = 80 V, (E open) - VCB = 100 V, (E open) TIP125 TIP126 TIP127 - ICBO - ICBO - ICBO – – – – – – 200 nA 200 nA 200 nA Collector-Base Capacitance – Kollektor-Basis-Kapazität - V CB = 10 V, IE = ie = 0, f = 100 kHz C CB0 – – 200 pF Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 63 K/W 1) Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 3 K/W Admissible torque for mounting Zulässiges Anzugsdrehmoment M4 9 ± 10% lb.in. 1 ± 10% Nm Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren TIP120 ... TIP122 Equivalent Circuit – Ersatzschaltbild 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG T 1 T 2 EB C T2 T1 E2 C2 B1 |
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