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BUZ102S Datasheet(Fiches technique) 4 Page - Infineon Technologies AG

Numéro de pièce BUZ102S
Description  SIPMOS Power Transistor
Télécharger  8 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ102S Datasheet(HTML) 4 Page - Infineon Technologies AG

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BUZ 102S
Data Book
4
05.99
Electrical Characteristics, at
Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 52 A
12
nC
8
Qgs
-
-
23
Qgd
Gate to drain charge
VDD = 40 V, ID = 52 A
34.5
Gate charge total
VDD = 40 V, ID = 52 A, VGS = 0 to 10 V
-
45
70
Qg
Gate plateau voltage
VDD = 40 V, ID = 52 A
V(plateau)
5.9
-
V
-
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
IS
-
-
52
A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
-
208
Inverse diode forward voltage
VGS = 0 V, IF = 104 A
VSD
-
1.2
V
1.7
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
trr
-
70
ns
105
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
-
µC
0.15
0.25


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