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TS821BILT Fiches technique(PDF) 4 Page - STMicroelectronics |
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TS821BILT Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 9 page Electrical characteristics TS821 4/9 Table 5. TS821B (0.5% precision) Tamb = 25°C (1) (unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit Vk Reverse breakdown voltage Ik = 100μA 1.219 1.225 1.231 V Reverse breakdown voltage tolerance Ik = 100μA -40°C < Tamb < +85°C -6 -16 +6 +16 mV Ik-min Minimum operating current Tamb = 25°C 40 45 μA -40°C < Tamb < +85°C 50 ΔVref/ΔT Average temperature coefficient Ik = 100μA 120 ppm/°C ΔVk/ΔIk Reverse breakdown voltage change with operating current range Ik-min < Ik < 1mA -40°C < Tamb < +85°C 0.3 0.7 1 mV 1mA < Ik < 12mA -40°C < Tamb < +85°C 2.5 5 7 Rka Static impedance ΔIk = 45μA to 1mA 0.25 0.5 W Kvh Long term stability Ik = 100μA, t = 1000hrs 120 ppm En Wide band noise Ik = 100μA 10Hz < f < 10kHz 200 nV/ √Hz 1. Limits are 100% production tested at 25°C. Behavior at the temperature range limits is guaranteed through correlation and by design. |
Numéro de pièce similaire - TS821BILT |
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Description similaire - TS821BILT |
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