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FQP5N60 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FQP5N60
Description  600V N-Channel MOSFET
Download  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP5N60 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical Characteristics
T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  5.0A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
 300µs, Duty cycle  2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
10
µA
VDS = 480 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.5 A
--
1.57
2.0
gFS
Forward Transconductance
VDS = 50 V, ID = 2.5 A
--
4.0
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
560
730
pF
Coss
Output Capacitance
--
80
100
pF
Crss
Reverse Transfer Capacitance
--
9
12
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 5.0 A,
RG = 25 Ω
--
13
35
ns
tr
Turn-On Rise Time
--
45
100
ns
td(off)
Turn-Off Delay Time
--
35
80
ns
tf
Turn-Off Fall Time
--
40
90
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 5.0 A,
VGS = 10 V
--
16
20
nC
Qgs
Gate-Source Charge
--
3.5
--
nC
Qgd
Gate-Drain Charge
--
7.8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5.0 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.0 A,
dIF / dt = 100 A/µs
--
270
--
ns
Qrr
Reverse Recovery Charge
--
1.9
--
µC


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