 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
IRFP22N50APBF Fiches technique(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRFP22N50APBF Fiches technique(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRFP22N50APbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 13A Qg Total Gate Charge ––– ––– 120 ID = 22A Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 52 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 26 ––– VDD = 250V tr Rise Time ––– 94 ––– ID = 22A td(off) Turn-Off Delay Time ––– 47 ––– RG = 4.3Ω tf Fall Time ––– 47 ––– RD = 11Ω,See Fig. 10 Ciss Input Capacitance ––– 3450 ––– VGS = 0V Coss Output Capacitance ––– 513 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 27 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 4935 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 137 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 264 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 1180 mJ IAR Avalanche Current ––– 22 A EAR Repetitive Avalanche Energy ––– 28 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 22A, VGS = 0V trr Reverse Recovery Time ––– 570 850 ns TJ = 25°C, IF = 22A Qrr Reverse RecoveryCharge ––– 6.1 9.2 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 22 88 A Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.23 Ω VGS = 10V, ID = 13A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current |
Numéro de pièce similaire - IRFP22N50APBF |
|
Description similaire - IRFP22N50APBF |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
