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IRF3710SPBF Datasheet(Fiches technique) 1 Page - International Rectifier

Numéro de pièce IRF3710SPBF
Description  HEXFET® Power MOSFET ( VDSS = 100V , RDS(on) = 23mΩ , ID = 57A )
Télécharger  11 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF3710SPBF Datasheet(HTML) 1 Page - International Rectifier

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IRF3710SPbF
IRF3710LPbF
HEXFET® Power MOSFET
9/16/04
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mounted,steady-state)**
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
‡
57
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
‡
40
A
IDM
Pulsed Drain Current
‡
180
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

28
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
5.8
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
PD - 95108
D2Pak
IRF3710SPbF
TO-262
IRF3710LPbF


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