IRF7317PbF

Fig 21. Typical Gate Charge Vs.

Gate-to-SourceVoltage

Fig 20. Typical Capacitance Vs.

Drain-to-SourceVoltage

P-Channel

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

-

0

200

400

600

800

1000

1200

1400

1

10

100

A

DS

-V

, Drain-to-Source Voltage (V)

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

0

2

4

6

8

10

0

5

10

15

20

25

30

G

A

Q , Total Gate Charge (nC)

I = -2.9A

V

= -16V

D

DS

0.1

1

10

100

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)