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A5N:1500.02H Fiches technique(PDF) 1 Page - AEGIS SEMICONDUTORES LTDA

No de pièce A5N:1500.02H
Description  Phase Control Thyristors
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A5N:1500.02H Fiches technique(HTML) 1 Page - AEGIS SEMICONDUTORES LTDA

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SEMICONDUTORES LTDA.
AEGIS
A5N:1500.XXH
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VOLTAGE RATINGS
VRSM , VR (V)
Max. non-
rep. peak reverse voltage
TJ = 0 to 125 C
TJ = -40 to 0 C
TJ = 25 to 125 C
A5N:1500.02H
200
200
300
A5N:1500.04H
400
400
500
A5N:1500.06H
600
600
700
A5N:1500.08H
800
800
900
A5N:1500.10H
1000
1000
1100
A5N:1500.12H
1200
1200
1300
A5N:1500.14H
1400
1400
1500
A5N:1500.16H
1600
1600
1700
VRRM , VR (V)
Max. rep. peak reverse voltage
Part Number
MAXIMUM ALLOWABLE RATINGS
VALUE
UNITS
-40 to 125
C
-40 to 150
C
Max. Av. current
1500
A
@ Max. TC
75
C
2350
A
28.14
50 Hz half cycle sine wave
30.67
60 Hz half cycle sine wave
32.11
50 Hz half cycle sine wave
35.00
60 Hz half cycle sine wave
4121
t = 10ms
4492
t = 8.3 ms
4702
t = 10ms
5125
t = 8.3 ms
56150
kA
2s1/2
800
A/ms
16
W
3
W
150
mA
2
V
2500
N.m
PGM Max. Peak gate power
IT(RMS) Nom. RMS current
-
tp < 5 ms
Initial TJ = 125 C, no voltage
applied after surge.
ITSM Max. Peak non-rep. surge
current
kA
I
2t Max. I2t capability
kA
2s
Initial TJ = 125 C, rated VRRM
applied after surge.
IT(AV)
NOTES
Initial TJ = 125 C, rated VRRM
applied after surge.
180 half sine wave
-
-
PARAMETER
TJ Junction Temperature
Tstg Storage Temperature
Initial TJ = 125 C, no voltage
applied after surge.
I
2t1/2 Max. I2t1/2 capability
di/dt Max. Non-repetitive rate-of-
rise current
Initial TJ = 125 C, no voltage applied after surge.
I
2t for time t
x = I
2t1/2 * t
x
1/2. (0.1 < tx < 10ms).
TJ = 125 C, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W,
10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately
40% of non-repetitive value.
PG(AV) Max. Av. gate power
-
+IGM Max. Peak gate current
tp < 5 ms
-VGM Max. Peak negative gate
voltage
-
F Mounting Force
-


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