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A5N:1400.16 Fiches technique(PDF) 2 Page - AEGIS SEMICONDUTORES LTDA

No de pièce A5N:1400.16
Description  Phase Control Thyristors
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Fabricant  AEGIS [AEGIS SEMICONDUTORES LTDA]
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Logo AEGIS - AEGIS SEMICONDUTORES LTDA

A5N:1400.16 Fiches technique(HTML) 2 Page - AEGIS SEMICONDUTORES LTDA

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SEMICONDUTORES LTDA.
AEGIS
A5N:1400.XXH
CHARACTERISTICS
PARAMETER
MIN.
TYP.
MAX. UNITS
VTM peak on-state voltage
---
1.38
1.73
V
VT(TO)1 Low-level threshold
---
---
0.91
VT(TO)2 High-level threshold
---
---
1.01
rT1 Low-level resistance
---
---
0.21
rT2 High-level resistance
---
---
0.19
IL Latching current
---
1000
---
mA
IH Holding current
---
100
600
mA
td Delay time
---
0.5
1.9
ms
tq Turn-off time
---
---
200
ms
300
500
---
600
---
---
IRM,IDM Peak reverse and off-
state current
---
40
100
mA
---
200
---
TC = -40 C
75
100
200
TC =25C
---
1.4
---
TC = -40 C
---
1.1
3
TC =25C
VGD DC gate voltage not to
trigger
---
---
0.25
V
---
---
0.023
C/W
---
---
0.025
C/W
---
---
0.025
C/W
RthCS Thermal resistance,
case-to-sink
---
---
0.01
C/W
wt Weight
---
425 (15)
---
g(oz.)
Case Style
JEDEC
---
TJ = 125 C
Av. power = VT(TO) *IT(AV) +rT *[IT(RMS)]
2
TC = 25 C, 12V anode. Gate pulse: 10V, 20
W, 100ms.
Higher dv/dt values
avaliable.
TJ = 125 C. Exp. to 100% or lin.
To 80% V DRM, gate open.
TJ = 125 C, Exp. To 67% VDRM, gate open.
TJ = 125 C, ITM = 500A, di/dt = 25A/
ms, V
R = 50V. dv/dt = 200
V/
ms lin. To 80% rated V
DRM. Gate: 0V, 100
W.
Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 4398A.
Use low values for ITM <
p rated I
T(AV)
TEST CONDITIONS
---
V
m
W
TC = 25 C, 12V anode. Initial IT = 10A.
TC =25C,VD = rated VDRM, 50A resistive load. Gate pulse:
10V, 20
W,10ms, 1ms rise time.
120 rectangular wave, double side cooled.
dv/dt Critical rate-of-rise of off-
state voltage
IGT DC gate current to trigger
VGT DC gate voltage to trigger
RthJC Thermal resistance,
junction-to-case
TO-200AD
TJ = 125 C, Rated VRRM and VDRM, gate open.
+12V anode-to-cathode. For recommended
gate drive see "Gate Characteristics" figure.
V/
ms
mA
V
Mtg. Surface smooth, flat and greased.
TC = 25 C, Max. Value which will not trigger with rated VDRM
anode-to-cathode.
DC operation.
180 sine wave, double side coolde.


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