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A1N:16.02J Fiches technique(PDF) 1 Page - AEGIS SEMICONDUTORES LTDA

No de pièce A1N:16.02J
Description  Phase Control Thyristors
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A1N:16.02J Fiches technique(HTML) 1 Page - AEGIS SEMICONDUTORES LTDA

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AEGIS
A1N:16.XXJ
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This datasheet applies to:
Metric thread: A1N:16.XXJ
Inch thread: A2N:16.XXJ
VOLTAGE RATINGS
VRSM , VR (V)
Max. non-
rep. peak reverse voltage
TJ = 0 to 125 C
TJ = -40 to 0 C
TJ = 25 to 125 C
A1N:16.02J
200
200
300
A1N:16.04J
400
400
500
A1N:16.06J
600
600
700
A1N:16.08J
800
800
900
A1N:16.10J
1000
1000
1100
A1N:16.12J
1200
1200
1300
A1N:16.14J
1400
1330
1500
A1N:16.16J
1600
1520
1700
VRRM , VR (V)
Max. rep. peak reverse voltage
Part Number
MAXIMUM ALLOWABLE RATINGS
VALUE
UNITS
-40 to 125
C
-40 to 150
C
Max. Av. current
16
A
@ Max. TC
85
C
35
A
0.28
50 Hz half cycle sine wave
0.31
60 Hz half cycle sine wave
0.33
50 Hz half cycle sine wave
0.36
60 Hz half cycle sine wave
0.34
t = 10ms
0.37
t = 8.3 ms
0.48
t = 10ms
0.52
t = 8.3 ms
5.74
kA
2s1/2
150
A/ms
8
W
2
W
150
mA
2
V
2.8(25)
N.m(Lbf.in)
NOTES
Initial TJ = 125 C, rated VRRM
applied after surge.
180 half sine wave
PGM Max. Peak gate power
IF(RMS) Nom. RMS current
-
tp < 5 ms
Initial TJ = 125 C, no voltage
applied after surge.
IFSM Max. Peak non-rep. surge
current
-
A
-
PARAMETER
TJ Junction Temperature
Tstg Storage Temperature
IF(AV)
I
2t Max. I2t capability
kA
2s
Initial TJ = 125 C, rated VRRM
applied after surge.
Initial TJ = 125 C, no voltage
applied after surge.
I
2t1/2 Max. I2t1/2 capability
di/dt Max. Non-repetitive rate-of-
rise current
Initial TJ = 125 C, no voltage applied after surge.
I
2t for time t
x = I
2t1/2 * t
x
1/2. (0.1 < tx < 10ms).
TJ = 125 C, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W,
10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately
40% of non-repetitive value.
PG(AV) Max. Av. gate power
-
+IGM Max. Peak gate current
tp < 5 ms
-VGM Max. Peak negative gate
voltage
-
F Mounting Force
Non lubricated threads


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