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EGF1A Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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EGF1A Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page - 586 - .062(1.58) .050(1.27) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .187(4.75) .160(4.06) .210(5.33) .195(4.95) .111(2.83) .090(2.29) .091(2.30) .078(1.99) EGF1A THRU EGF1M 1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere Features Ideal for surface mount automotive applications Glass passivated cavity-free junction Easy pick and place Capable of meeting enviromental standard of MIL-S-19500 Plastic material used carries Underwriters Laboratory Classification 94V-O Compete device submersible temperature of 265 OC for 10 sec in solder bath. Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.120 gram SMA/DO-214AC Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol EGF 1A EGF 1B EGF 1C EGF 1D EGF 1G EGF 1J EGF 1K EGF 1M Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 105 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 800 1000 V Maximum Average Forward Rectified Current @TL =125 ℃ I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 1.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @TA =25 ℃ at Rated DC Blocking Voltage @ TA=125 ℃ IR 5 100 uA uA Maximum Reverse Recovery Time (Note 1 ) Trr 50 75 nS Typical Junction Capacitance ( Note 2 ) Cj 15 pF Typical Thermal Resistance (Note 3) R θJA R θJL 85.0 30.0 ℃/W Operating Temperature Range TJ -65 to +175 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied V R=4.0 Volts 3. Thermal Resistance from Junction to Ambient and from Junction to Lead P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas. |
Numéro de pièce similaire - EGF1A |
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Description similaire - EGF1A |
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