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EGF1A Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce EGF1A
Description  1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

EGF1A Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  EGF1A Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd EGF1A Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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RATINGS AND CHARACTERISTIC CURVES (EGF1A THRU EGF1M)
LEAD TEMPERATURE ( C)
O
Tj = 150 C
O
Tj=25 C
O
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
0
25
50
75
100
125
150
175
0
0.5
1.0
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.2- MAXIMUM NON-REPETITVE PEAK FORWARD
SURGE CURRENT
FIG.4- TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1
10
100
5.0
0
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
1.4
1.6
1.8
0.01
1.2
0.1
1
10
50
020
40
60
80
100
0.01
0.1
1
10
100
1000
100
10
1
0.1
0.1
1
100
10
0
20
10
30
40
50
70
60
0.01
1
100
10
0.1
REVERSE VOLTAGE (V)
PULSE DURATION. SECRETARY (T)
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
8.3ms Single Half Sine Wave
(JEDEC Method)
Tj = Tj MAX
Tj = 150 C
O
Tj = 100 C
O
Tj=25 C
O
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
O
PULSE WIDTH-300 S
1% DUTY CYCLE


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