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TIPP110 Fiches technique(PDF) 1 Page - Power Innovations Ltd

No de pièce TIPP110
Description  NPN SILICON POWER DARLINGTONS
Download  6 Pages
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Fabricant  POINN [Power Innovations Ltd]
Site Internet  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIPP110 Fiches technique(HTML) 1 Page - Power Innovations Ltd

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TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
PRODUCT
INFORMATION
1
MAY 1989 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
20 W Pulsed Power Dissipation
q
100 V Capability
q
2 A Continuous Collector Current
q
4 A Peak Collector Current
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
TIPP110
TIPP111
TIPP112
VCBO
60
80
100
V
Collector-emitter voltage (IB = 0)
TIPP110
TIPP111
TIPP112
VCEO
60
80
100
V
Emitter-base voltage
VEBO
5
V
Continuous collector current
IC
2
A
Peak collector current (see Note 1)
ICM
4
A
Continuous base current
IB
50
mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
0.8
W
Pulsed power dissipation (see Note 3)
PT
20
W
Operating junction temperature range
Tj
-55 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
260
°C


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