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BUZ110S Datasheet(Fiches technique) 2 Page - Infineon Technologies AG

Numéro de pièce BUZ110S
Description  SIPMOS® Power Transistor
Télécharger  8 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ110S Datasheet(HTML) 2 Page - Infineon Technologies AG

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BUZ 110S
Data Book
2
05.99
Thermal Characteristics
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
RthJC
-
-
0.75
K/W
Thermal resistance, junction - case
-
Thermal resistance, junction - ambient, leded
RthJA
-
62
-
-
-
-
62
40
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
RthJA
Electrical Characteristics, at
Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
max.
typ.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
-
V(BR)DSS
55
-
V
Gate threshold voltage,
VGS = VDS
ID = 200 µA
VGS(th)
4
3
2.1
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C
-
-
IDSS
µA
1
100
0.1
-
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
nA
100
Drain-Source on-state resistance
VGS = 10 V, ID = 66 A
RDS(on)
-
0.009
0.01
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.


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