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BDW24C Datasheet(Fiches technique) 2 Page - Power Innovations Ltd

Numéro de pièce BDW24C
Description  PNP SILICON POWER DARLINGTONS
Télécharger  6 Pages
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Fabricant  POINN [Power Innovations Ltd]
Site Internet  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BDW24C Datasheet(HTML) 2 Page - Power Innovations Ltd

  BDW24C Datenblatt HTML 1Page - Power Innovations Ltd BDW24C Datasheet HTML 2Page - Power Innovations Ltd BDW24C Datenblatt HTML 3Page - Power Innovations Ltd BDW24C Datenblatt HTML 4Page - Power Innovations Ltd BDW24C Datenblatt HTML 5Page - Power Innovations Ltd BDW24C Datenblatt HTML 6Page - Power Innovations Ltd  
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BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
2
MAY 1989 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -100 mA
IB = 0
(see Note 3)
BDW24
BDW24A
BDW24B
BDW24C
-45
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
IB = 0
IB = 0
IB = 0
IB = 0
BDW24
BDW24A
BDW24B
BDW24C
-0.5
-0.5
-0.5
-0.5
mA
ICBO
Collector cut-off
current
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
IE = 0
IE = 0
IE = 0
IE = 0
BDW24
BDW24A
BDW24B
BDW24C
-0.2
-0.2
-0.2
-0.2
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC = 0
-2
mA
hFE
Forward current
transfer ratio
VCE =
-3 V
VCE =
-3 V
VCE =
-3 V
IC = -1 A
IC = -2 A
IC = -6 A
(see Notes 3 and 4)
1000
750
100
20000
VCE(sat)
Collector-emitter
saturation voltage
IB =
-8 mA
IB = -60 mA
IC = -2 A
IC = -6 A
(see Notes 3 and 4)
-2
-3
V
VBE(sat)
Base-emitter
saturation voltage
IB =
-8 mA
IC = -2 A
(see Notes 3 and 4)
-2.5
V
VBE(on)
Base-emitter
voltage
VCE =
-3 V
VCE =
-3 V
IC = -1 A
IC = -6 A
(see Notes 3 and 4)
-2.5
-3
V
VEC
Parallel diode
forward voltage
IE =
-2 A
IB = 0
-1.8
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -3 A
VBE(off) = 4.5 V
IB(on) = -12 mA
RL = 10 Ω
IB(off) = 12 mA
tp = 20 µs, dc ≤ 2%
1
µs
toff
Turn-off time
5
µs


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