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BDV65 Fiches technique(PDF) 2 Page - Power Innovations Ltd

No de pièce BDV65
Description  NPN SILICON POWER DARLINGTONS
Download  6 Pages
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Fabricant  POINN [Power Innovations Ltd]
Site Internet  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BDV65 Fiches technique(HTML) 2 Page - Power Innovations Ltd

  BDV65 Datasheet HTML 1Page - Power Innovations Ltd BDV65 Datasheet HTML 2Page - Power Innovations Ltd BDV65 Datasheet HTML 3Page - Power Innovations Ltd BDV65 Datasheet HTML 4Page - Power Innovations Ltd BDV65 Datasheet HTML 5Page - Power Innovations Ltd BDV65 Datasheet HTML 6Page - Power Innovations Ltd  
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BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
2
JUNE 1993 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
IB = 0
(see Note 4)
BDV65
BDV65A
BDV65B
BDV65C
60
80
100
120
V
ICEO
Collector-emitter
cut-off current
VCB = 30 V
VCB = 40 V
VCB = 50 V
VCB = 60 V
IB = 0
IB = 0
IB = 0
IB = 0
BDV65
BDV65A
BDV65B
BDV65C
2
2
2
2
mA
ICBO
Collector cut-off
current
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 30 V
VCB = 40 V
VCB = 50 V
VCB = 60 V
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
0.4
0.4
0.4
0.4
2
2
2
2
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
5
mA
hFE
Forward current
transfer ratio
VCE =
4 V
IC = 5 A
(see Notes 4 and 5)
1000
VCE(sat)
Collector-emitter
saturation voltage
IB =
20 mA
IC = 5 A
(see Notes 4 and 5)
2
V
VBE
Base-emitter
voltage
VCE =
4 V
IC = 5 A
(see Notes 4 and 5)
2.5
V
VEC
Parallel diode
forward voltage
IE =
10 A
IB = 0
(see Notes 4 and 5)
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W


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