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CY25701 Fiches technique(PDF) 3 Page - Cypress Semiconductor

No de pièce CY25701
Description  Programmable High-Frequency Crystal Oscillator with Spread Spectrum (SSXO) and No-Spread Spectrum (XO) Option
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY25701 Fiches technique(HTML) 3 Page - Cypress Semiconductor

  CY25701_06 Datasheet HTML 1Page - Cypress Semiconductor CY25701_06 Datasheet HTML 2Page - Cypress Semiconductor CY25701_06 Datasheet HTML 3Page - Cypress Semiconductor CY25701_06 Datasheet HTML 4Page - Cypress Semiconductor CY25701_06 Datasheet HTML 5Page - Cypress Semiconductor CY25701_06 Datasheet HTML 6Page - Cypress Semiconductor CY25701_06 Datasheet HTML 7Page - Cypress Semiconductor CY25701_06 Datasheet HTML 8Page - Cypress Semiconductor  
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CY25701
Document #: 001-07313 Rev. *A
Page 3 of 8
Absolute Maximum Ratings
Supply Voltage (VDD) .................................... –0.5V to +7.0V
DC Input Voltage ....................................–0.5V to VDD + 0.5V
Storage Temperature (Non-condensing) .... –55°C to +100°C
Junction Temperature ................................ –40°C to +125°C
Data Retention @ Tj = 125
°C.................................>10 years
Package Power Dissipation...................................... 350 mW
Table 2. Spread Percent Selection
Center Spread
Code
A
B
C
D
E
F
Z
Percentage
±0.25%
±0.5%
±0.75%
±1.0%
±1.5%
±2.0%
±0.0%
Down Spread
Code
G
H
J
K
L
M
Z
Percentage
–0.5%
–1.0%
–1.5%
–2.0%
–3.0%
–4.0%
±0.0%
Operating Conditions
Parameter
Description
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.00
3.30
3.60
V
TA
Ambient Temperature (Commercial)
–20
70
°C
TA
Ambient Temperature (Industrial)
–40
85
°C
CLOAD
Max. Load Capacitance @ pin 3
15
pF
FSSCLK
SSCLK output frequency, CLOAD = 15 pF
10
166
MHz
FMOD
Spread Spectrum Modulation Frequency
30.0
31.5
33.0
kHz
TPU
Power-up time for VDD to reach minimum specified voltage (power ramp must be
monotonic)
0.05
500
ms
Note
2. Guaranteed by characterization, not 100% tested.
DC Electrical Characteristics
Parameter
Description
Condition
Min.
Typ.
Max.
Unit
IOH
Output High Current (pin 3)
VOH = VDD – 0.5, VDD = 3.3V (source)
10
12
mA
IOL
Output Low Current (pin 3)
VOL = 0.5, VDD= 3.3V (sink)
10
12
mA
VIH
Input High Voltage (pin 1)
CMOS levels, 70% of VDD
0.7VDD
–VDD
V
VIL
Input Low Voltage (pin 1)
CMOS levels, 30% of VDD
0.3VDD
V
IIH
Input High Current (pin 1)
Vin = VDD
––
10
µA
IIL
Input Low Current (pin 1)
Vin = VSS
––
10
µA
IOZ
Output Leakage Current (pin 3)
Three-state output, OE = 0
–10
10
µA
CIN
[2]
Input Capacitance (pin 1)
Pin 1, or OE
5
7
pF
IVDD
Supply Current
VDD = 3.3V, SSCLK = 10 to 166 MHz,
CLOAD = 0, OE = VDD
––
50
mA
∆f/f
Initial Accuracy at room temp.
TA = 25°C, 3.3V
–25
25
ppm
Freq. Stability over temp. range
TA = –20°C to 70°C, 3.3V
–25
25
ppm
Freq. Stability over voltage range 3.0 to 3.6V
–12
12
ppm
Aging
TA = 25°C, First year
–5
5
ppm
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