2SK2312_02 datasheet(1/6 Pages) TOSHIBA

No de pièce	2SK2312

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2SK2312

2002-02-06

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

2

−π−MOSV)

2SK2312

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

l 4 V gate drive

l Low drain−source ON resistance

: RDS (ON) = 13 mΩ (typ.)

l High forward transfer admittance

: |Yfs| = 40 S (typ.)

l Low leakage current

: IDSS = 100 µA (max) (VDS = 60 V)

l Enhancement−mode

: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

VDSS

60

V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

60

V

Gate−source voltage

VGSS

±20

V

DC (Note 1)

ID

45

A

Drain current

Pulse (Note 1)

IDP

180

A

Drain power dissipation (Tc = 25°C)

PD

45

W

Single pulse avalanche energy

(Note 2)

EAS

701

mJ

Avalanche current

IAR

45

A

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch−c)

2.78

°C / W

Thermal resistance, channel to

ambient

Rth (ch−a)

62.5

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 µH, RG = 25 Ω, IAR = 45 A

Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)

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Description similaire - 2SK2312_02

Fabricant	No de pièce	Fiches technique	Description
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