2SA2209 datasheet(2/4 Pages) SANYO

No de pièce	2SA2209

Description	PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

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Fabricant	SANYO [Sanyo Semicon Device]

Site Internet	https://www.sanyo-av.com/us/

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2 / 4 page

2SA2209

No. A0235-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=--7.5A, IB=--375mA

--250

--500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=--7.5A, IB=--375mA

--1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=--100µA, IE=0A

--50

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=--1mA, RBE=∞

--50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=--100µA, IC=0A

--6

V

Turn-ON Time

ton

See specified Test Circuit.

80

ns

Storage Time

tstg

See specified Test Circuit.

300

ns

Fall Time

tf

See specified Test Circuit.

45

ns

Package Dimensions

unit : mm (typ)

7518-003

7003-003

Switching Time Test Circuit

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

IT09987

0--2.0

--0.5

--1.0

--1.5

0

--1

--7

--6

--5

--4

--3

--2

--8

--9

--10

--11

--12

--13

--14

--15

IB=0mA

--50mA

--20mA

--100mA

--200m

A

--250

mA

--150mA

--300

mA

--350

mA

--400

mA

--450

mA

IT09988

0--1.0

--0.2

--0.4

--0.6

--0.8

0

--1

--2

--3

--4

--5

--6

--7

--8

IB=0mA

--40mA

--20mA

--10mA

--60mA

--80m

A

--100

mA

--120

mA

--140

mA

--160

mA

VR

RL

VCC= --25V

VBE=5V

IC=20IB1= --20IB2= --7A

+

50Ω

INPUT

OUTPUT

RB

100µF

470µF

PW=20µs

IB1

IB2

D.C.≤1%

6.5

5.0

2.3

0.5

12

4

3

0.85

0.7

1.2

0.6

0.5

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

6.5

5.0

2.3

0.5

12

4

3

0.85

0.6

0.5

1.2

2.3

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

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