2SK3099LS

No.8628-1/3

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN8628

N0806QB SY IM TC-00000315

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

SANYO Semiconductors

DATA SHEET

2SK3099LS

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Features

•

Low ON-resistance.

•

Low Qg.

•

Ultrahigh-Speed Switching Applications.

•

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

400

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

9A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

36

A

Allowable Power Dissipation

PD

2.0

W

Tc=25

°C35

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Enargy (Single Pulse) *1

EAS

92.6

mJ

Avalanche Current *2

IAV

9A

*1 VDD=50V, L=2mH, IAV=9A

*2 L

≤2mH, single pulse

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

400

V

Zero-Gate Voltage Drain Current

IDSS

VDS=320V, VGS=0V

1.0

mA

Gate-to-Source Leakage Current

IGSS

VGS= ±30V, VDS=0V

±100

nA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

3.0

4.0

V

Forward Transfer Admittance

yfs

VDS=10V, ID=6A

2.9

5.8

S

Static Drain-to-Source On-State Resistance

RDS(on)

ID=6A, VGS=15V

0.43

0.55

Ω

Marking : K3099

Continued on next page.