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TEA6810V Fiches technique(PDF) 10 Page - NXP Semiconductors |
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TEA6810V Fiches technique(HTML) 10 Page - NXP Semiconductors |
10 / 24 page 1996 Jun 18 10 Philips Semiconductors Product specification Front-end and PLL synthesizers for car radios TEA6810V; TEA6811V FM signal channel (note 3; see Fig.5) MIXER Ri input resistance between pins 30 and 31 1.65(2) 2 − k Ω Ci input capacitance between pins 30 and 31 3.4(2) 4 4.5(2) pF Ro output resistance between pins 11 and 12 10 −− k Ω Co output capacitance between pins 11 and 12 6.5(2) 89(2) pF Gm transconductance I11 to I12/V30 to V31 <VAGC1 5.5 6.3 6.9 mS I11 to I12/V30 to V31 <VAGC2 − 4.7 − mS I11 to I12/V30 to V31 <VAGC3 − 2.3 − mS I11 to I12/V30 to V31 >VAGC3 − 1.0 − mS ∆GmT variation in transconductance with temperature <VAGC1 −−0.015 − mS/K F noise figure (both sidebands) fi = 72.2 MHz; PLL tuned − 7(2) − dB IP3 third-order intermodulation 135(2) 139 − dBmV CP −1 dB compression point 120(2) 127 − dBmV α IF1 1st IF rejection 25(2) 30 − dB VAGC(S) AGC start voltage between pins 30 and 31 start level 1 4.8 6.2 7.8 mV start level 2 − 15 − mV start level 3 − 39 − mV VAGC(H) AGC hysteresis voltage hysteresis level 1 − 1 − mV hysteresis level 2 − 2 − mV hysteresis level 3 − 3 − mV R33 FM AGC output resistance − 5 − k Ω Ipin pin diode current V32 = 1.4 V 4 −− mA Vpin start level pin diode voltage between pins 30 and 31 Io =1mA − 57 − mV OSCILLATOR fosc oscillator frequency 116.8 − 207 MHz ∆f osc/∆T oscillator temperature dependence −−90 − 10−6/K SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
Numéro de pièce similaire - TEA6810V |
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Description similaire - TEA6810V |
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