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RJK6014DPP Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce RJK6014DPP
Description  Silicon N Channel MOS FET High Speed Power Switching
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6014DPP Fiches technique(HTML) 2 Page - Renesas Technology Corp

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RJK6014DPP
REJ03G1531-0100 Rev.1.00 Apr 17, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 600 V, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS =
±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
4.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
0.475
0.575
ID = 8 A, VGS = 10 V
Note5
Input capacitance
Ciss
1800
pF
Output capacitance
Coss
170
pF
Reverse transfer capacitance
Crss
20
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
36
ns
Rise time
tr
29
ns
Turn-off delay time
td(off)
93
ns
Fall time
tf
20
ns
ID = 8 A
VGS = 10 V
RL = 37.5
Rg = 10
Total gate charge
Qg
45
nC
Gate to source charge
Qgs
9
nC
Gate to drain charge
Qgd
20
nC
VDD = 480 V
VGS = 10 V
ID = 16 A
Body-drain diode forward voltage
VDF
0.91
1.50
V
IF = 16 A, VGS = 0
Note5
Body-drain diode reverse recovery time
trr
390
ns
IF = 16 A, VGS = 0
diF/dt = 100 A/
µs
Notes: 5. Pulse test


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