Moteur de recherche de fiches techniques de composants électroniques |
|
RJK6014DPP Fiches technique(PDF) 1 Page - Renesas Technology Corp |
|
RJK6014DPP Fiches technique(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Page 1 of 3 RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID Note4 16 A Drain peak current ID (pulse) Note1 32 A Body-drain diode reverse drain current IDR 16 A Body-drain diode reverse drain peak current IDR (pulse) Note1 32 A Avalanche current IAP Note3 4 A Avalanche energy EAR Note3 0.87 mJ Channel dissipation Pch Note2 35 W Channel to case thermal impedance θch-c 3.57 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C 4. Limited by maximum safe operation area |
Numéro de pièce similaire - RJK6014DPP |
|
Description similaire - RJK6014DPP |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |