 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
IRL3502 Fiches technique(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRL3502 Fiches technique(HTML) 2 Page - International Rectifier |
|
|
2 / 7 page  IRL3502PbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.019 V/°C Reference to 25°C, ID = 1mA 0.008 VGS = 4.5V, ID = 64A 0.007 Ω VGS = 7.0V, ID = 64A VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA gfs Forward Transconductance 77 S VDS = 10V, ID = 64A 25 µA VDS = 20V, VGS = 0V 250 VDS = 10V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 nA VGS = -10V Gate-to-Source Reverse Leakage -100 VGS = 10V Qg Total Gate Charge 110 ID = 64A Qgs Gate-to-Source Charge 27 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge 39 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time 10 VDD = 10V tr Rise Time 140 ns ID = 64A td(off) Turn-Off Delay Time 96 RG = 3.8Ω, VGS = 4.5V tf Fall Time 130 RD = 0.15Ω, Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 4700 VGS = 0V Coss Output Capacitance 1900 pF VDS = 15V Crss Reverse Transfer Capacitance 640 = 1.0MHz, See Fig. 5 S D G S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 64A, VGS = 0V trr Reverse Recovery Time 87 130 ns TJ = 25°C, IF = 64A Qrr Reverse RecoveryCharge 200 310 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 110
420 A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance 7.5 LD Internal Drain Inductance 4.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ 64A, di/dt ≤ 86A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 190µH RG = 25Ω, IAS = 64A. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 |
Numéro de pièce similaire - IRL3502 |
|
Description similaire - IRL3502 |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
