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GE13005 Fiches technique(PDF) 1 Page - GTM CORPORATION

No de pièce GE13005
Description  NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
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Fabricant  GTM [GTM CORPORATION]
Site Internet  http://www.gtm.com.tw
Logo GTM - GTM CORPORATION

GE13005 Fiches technique(HTML) 1 Page - GTM CORPORATION

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ISSUED DATE :2005/01/12
REVISED DATE :
GE13005
N P N S I L I C O N T R I P L E D I F F U S E D M E S A T Y P E T R A N S I S T O R
Description
The GE13005 is designed for electronic transformers and power switching circuit applications.
Package Dimensions
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c1
1.25
1.45
b
0.76
1.00
b1
1.17
1.47
c
0.36
0.50
L
13.25
14.25
D
8.60
9.00
e
2.54 REF.
E
9.80
10.4
L1
2.60
2.89
L4
14.7
15.3
Ø
3.71
3.96
L5
6.20
6.60
A1
2.60
2.80
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
700
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
9
V
Collector Current
IC
4
A
Total Power Dissipation at Tc=25 :
PD
75
W
Electrical Characteristics(Tc = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Collector-Emitter Sustaining Voltage
VCEO(sus)
400
-
-
V
IC=10mA , IB=0
Collector-Base Breakdown Voltage
BVCBO
700
-
-
V
IC=1mA , IE=0
Emitter-Base Breakdown Voltage
BVEBO
9
-
-
V
IE=1mA , IC=0
Collector Cutoff Current
ICBO
-
-
100
A
VCB=700V
Collector-Emitter Cutoff Current
ICEO
-
-
50
A
VCE=400V
Emitter-Base Cutoff Current
IEBO
-
-
10
A
VEB=7V
*VCE(sat)1
-
-
0.8
V
IC=1A, IB=200mA
Collector-Emitter Saturation Voltage
*VCE(sat)2
-
-
2.0
V
IC=4A, IB=1A
Base-Emitter Saturation Voltage
*VBE(sat)
-
-
1.6
V
IC=2A, IB=500mA
*HFE1
8
-
60
VCE=10V, IC=500mA
DC Current Gain
*HFE2
5
-
40
VCE=5V, IC=2A
Frequency characteristics
fT
4
-
-
MHz VCE=10V, IC=500mA, f=1MHz
Turn-On Time
ton
-
-
0.8
Storage Time
tstg
-
-
4
Fall Time
tf
-
-
0.9
s
VCC=125V, IC=2A, IB1=IB2=0.4A
*Pulse Test: Pulse Width=300 s, Duty Cycle
¯%


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