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1N5621 Fiches technique(PDF) 1 Page - Microsemi Corporation |
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1N5621 Fiches technique(HTML) 1 Page - Microsemi Corporation |
1 / 3 page VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright © 2007 1-15-2007 REV D S C O T TS DALE DIVISION 1N5615 thru 1N5623 DESCRIPTION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N5615 to 1N5623 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 200 to 1000 Volts. • JAN, JANTX, JANTXV, and JANS available per MIL- PRF-19500/429 • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5615US thru 1N5623US) • Fast recovery 1 Amp rectifiers 200 to 1000 V • Military and other high-reliability applications • General rectifier applications including bridges, half- bridges, catch diodes, etc. • High forward surge current capability • Extremely robust construction • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction & Storage Temperature: -65oC to +175oC • Thermal Resistance: 38oC/W junction to lead at 3/8 inch (10 mm) lead length from body • Thermal Impedance: 4.5oC/W @ 10 ms heating time • Average Rectified Forward Current (I O): 1.0 Amps @ TA = 55ºC • Forward Surge Current: 30 Amps @ 8.3 ms half-sine • Solder Temperatures: 260ºC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs (package dimensions on last page) • TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver axial-leads and no finish. • MARKING: Body paint and part number, etc. • POLARITY: Cathode band • TAPE & REEL option: Standard per EIA-296 • WEIGHT: 340 mg ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 50μA AVERAGE RECTIFIED CURRENT IO @ TA (NOTE 1) FORWAR D VOLTAGE (MAX.) VF @ 3A REVERSE CURRENT (MAX.) IR @ VRWM CAPACITANCE (MAX.) C @ VR =12 V f=1 MHz MAXIMUM SURGE CURRENT IFSM (NOTE 2) REVERSE RECOVERY (MAX.) (NOTE 3) trr VOLTS VOLTS AMPS VOLTS μA pF AMPS ns 50 oC 100 oC 25 oC 100 oC 1N5615 1N5617 1N5619 1N5621 1N5623 200 400 600 800 1000 220 440 660 880 1100 1.00 1.00 1.00 1.00 1.00 .750 .750 .750 .750 .750 .8 MIN. 1.6 MAX. .5 .5 .5 .5 .5 25 25 25 25 25 45 35 25 20 15 25 25 25 25 25 150 150 250 300 500 NOTE 1: From 1 Amp at TA = 55 oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at T A = 100 oC. From T A = 100 oC, derate linearly at 7.5 mA/ oC to 0 Amps at T A = 200 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC. NOTE 2: TA = 100 oC, f = 60 Hz, I O = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A “A” Package |
Numéro de pièce similaire - 1N5621 |
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Description similaire - 1N5621 |
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