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1N5621 Fiches technique(PDF) 1 Page - Microsemi Corporation

No de pièce 1N5621
Description  VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

1N5621 Fiches technique(HTML) 1 Page - Microsemi Corporation

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VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
© 2007
1-15-2007 REV D
S C O T TS DALE DIVISION
1N5615 thru 1N5623
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5615 to 1N5623 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5615US thru 1N5623US)
• Fast recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified Forward Current (I
O): 1.0 Amps @
TA = 55ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
• TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver axial-leads and no finish.
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWAR
D
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
CAPACITANCE
(MAX.)
C @ VR =12 V
f=1 MHz
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
trr
VOLTS
VOLTS
AMPS
VOLTS
μA
pF
AMPS
ns
50
oC
100
oC
25
oC
100
oC
1N5615
1N5617
1N5619
1N5621
1N5623
200
400
600
800
1000
220
440
660
880
1100
1.00
1.00
1.00
1.00
1.00
.750
.750
.750
.750
.750
.8 MIN.
1.6
MAX.
.5
.5
.5
.5
.5
25
25
25
25
25
45
35
25
20
15
25
25
25
25
25
150
150
250
300
500
NOTE 1: From 1 Amp at TA = 55
oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at T
A = 100
oC. From T
A = 100
oC,
derate linearly at 7.5 mA/
oC to 0 Amps at T
A = 200
oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175
oC.
NOTE 2: TA = 100
oC, f = 60 Hz, I
O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A
“A” Package


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