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1N4247 Fiches technique(PDF) 1 Page - Microsemi Corporation |
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1N4247 Fiches technique(HTML) 1 Page - Microsemi Corporation |
1 / 2 page S VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLAS RECTIFIERS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 12-07-2004 REV A SCOTTSD A L E DIVISION 1N4245 thru 1N4249 DESCRIPTION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF- 19500/286 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF package configurations are available by adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N4245 to 1N4249 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 200 to 1000 Volts. • JAN, JANTX, and JANTXV available per MIL-PRF- 19500/286 (for JANS, see 1N5614-5622 series) • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5614US thru 1N5622US) • Standard recovery 1 Amp rectifiers 200 to 1000 V • Military and other high-reliability applications • General rectifier applications including bridges, half-bridges, catch diodes, etc. • High forward surge current capability • Extremely robust construction • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction & Storage Temperature: -65oC to +175oC • Thermal Resistance: 42oC/W junction to lead at 3/8 inch (10 mm) lead length from body • Thermal Impedance: 4.5oC/W @ 10 ms • Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55ºC • Forward Surge Current: 25 Amps @ 8.3 ms half- sine • Solder Temperatures: 260ºC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish • MARKING: Body paint and part number, etc. • POLARITY: Cathode band • TAPE & REEL option: Standard per EIA-296 • WEIGHT: 340 mg • See package dimensions on last page ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM MINIMUM BREAKDOWN VOLTAGE VBR @ 100µA AVERAGE RECTIFIED CURRENT IO @ TA = 55 oC MAXIMUM FORWARD VOLTAGE VF @ 3 A MAXIMUM REVERSE CURRENT IR @ VRWM MAXIMUM SURGE CURRENT (NOTE 1) IFSM MAXIMUM REVERSE RECOVERY (NOTE 2) trr VOLTS VOLTS AMPS VOLTS µA AMPS µSec. 55 oC 25 oC 150 oC 1N4245 1N4246 1N4247 1N4248 1N4249 200 400 600 800 1000 240 480 720 960 1150 1.00 1.00 1.00 1.00 1.00 1.3 1.3 1.3 1.3 1.3 1.0 1.0 1.0 1.0 1.0 150 150 150 150 150 25 25 25 25 25 5.0 5.0 5.0 5.0 5.0 NOTE 1: IO = 1A, 8 ms surge NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = .250A |
Numéro de pièce similaire - 1N4247 |
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Description similaire - 1N4247 |
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