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TDA1561Q Fiches technique(PDF) 6 Page - NXP Semiconductors |
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TDA1561Q Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 24 page 1997 Aug 14 6 Philips Semiconductors Preliminary specification 2 × 23 W high efficiency car radio power amplifier TDA1561Q LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. The value of Rth(c-h) depends on the application (see Fig.3). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage operating − 18 V non operating − 30 V load dump; tr > 2.5 ms − 50 V VP(sc) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6V IOSM non-repetitive peak output current − 6A IORM repetitive peak output current − 4A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tvj virtual junction temperature − 150 °C Tamb operating ambient temperature −40 −°C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-c) thermal resistance from junction to case see note 1 1.3 K/W Rth(j-a) thermal resistance from junction to ambient 40 K/W |
Numéro de pièce similaire - TDA1561Q |
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Description similaire - TDA1561Q |
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