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APT41H50B Fiches technique(PDF) 1 Page - Microsemi Corporation

No de pièce APT41H50B
Description  N-Channel Ultrafast Recovery FREDFET
Download  4 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT41H50B Fiches technique(HTML) 1 Page - Microsemi Corporation

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Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
41
26
135
±30
930
21
Min
Typ
Max
625
0.20
0.11
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• UPS
• Welding
• Solar inverters
• Telecom rectifiers
FEATURES
• Fast switching with low EMI
• Very Low trr for maximum reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TO-247
D3PAK
APT41H50B
APT41H50S
500V, 41A, 0.15Ω Max, trr, ≤215ns
APT41H50B
APT41H50S
N-Channel Ultrafast Recovery FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com


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