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TDA1010A Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce TDA1010A
Description  6 W audio power amplifier in car applications 10 W audio power amplifier in mains-fed applications
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA1010A Fiches technique(HTML) 2 Page - NXP Semiconductors

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November 1982
2
Philips Semiconductors
Product specification
6 W audio power amplifier in car applications
10 W audio power amplifier in mains-fed
TDA1010A
The TDA1010A is a monolithic integrated class-B audio amplifier circuit in a 9-lead single in-line (SIL) plastic package.
The device is primarily developed as a 6 W car radio amplifier for use with 4
Ω and 2 Ω load impedances. The wide supply
voltage range and the flexibility of the IC make it an attractive proposition for record players and tape recorders with
output powers up to 10 W.
Special features are:
• single in-line (SIL) construction for easy mounting
• separated preamplifier and power amplifier
• high output power
• low-cost external components
• good ripple rejection
• thermal protection
QUICK REFERENCE DATA
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 Sepetember 06.
Supply voltage range
VP
6 to 24
V
Repetitive peak output current
IORM
max.
3
A
Output power at pin 2; dtot = 10%
VP = 14,4 V; RL = 2 Ω
Po
typ.
6,4
W
VP = 14,4 V; RL = 4 Ω
Po
typ.
6,2
W
VP = 14,4 V; RL = 8 Ω
Po
typ.
3,4
W
VP = 14,4 V; RL = 2 Ω; with additional bootstrap resistor of 220 Ω between
pins 3 and 4
Po
typ.
9
W
Total harmonic distortion at Po = 1 W; RL = 4 Ω
dtot
typ.
0,2
%
Input impedance
preamplifier (pin 8)
 Zi
typ.
30
k
power amplifier (pin 6)
 Z
i
typ.
20
k
Total quiescent current at VP = 14,4 V
Itot
typ.
31
mA
Sensitivity for Po = 5,8 W; RL = 4 Ω
Vi
typ.
10
mV
Operating ambient temperature
Tamb
−25 to + 150
°C
Storage temperature
Tstg
−55 to + 150
°C


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