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UF1000FCT Datasheet(Fiches technique) 1 Page - Won-Top Electronics

Numéro de pièce UF1000FCT
Description  10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
Télécharger  4 Pages
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Fabricant  WTE [Won-Top Electronics]
Site Internet  http://www.wontop.com
Logo WTE - Won-Top Electronics

UF1000FCT Datasheet(HTML) 1 Page - Won-Top Electronics

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UF1000FCT – UF1008FCT
1 of 4
© 2006 Won-Top Electronics
Pb
UF1000FCT – UF1008FCT
10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
Features
!
Glass Passivated Die Construction
B
!
Ultra-Fast Switching
!
Low Forward Voltage Drop
C
!
Low Reverse Leakage Current
!
High Surge Current Capability
G
A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1
2
3
                D
Mechanical Data
F
E
!
Case: ITO-220, Full Molded Plastic
!
Terminals: Plated Leads Solderable per
P
MIL-STD-202, Method 208
!
Polarity: See Diagram
I
!
Weight: 2.24 grams (approx.)
!
Mounting Position: Any
H
L
!
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
+
J
PIN 3 -
PIN 2
K
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
UF
1000FCT
UF
1001FCT
UF
1002FCT
UF
1003FCT
UF
1004FCT
UF
1006FCT
UF
1008FCT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
300
400
600
800
V
RMS Reverse Voltage
VR(RMS)
35
70
140
210
280
420
560
V
Average Rectified Output Current
@TC = 100°C
IO
10
A
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
125
A
Forward Voltage
@IF = 5.0A
VFM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 125°C
IRM
10
400
µA
Reverse Recovery Time (Note 1)
trr
50
100
nS
Typical Junction Capacitance (Note 2)
Cj
80
50
pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
ITO-220
Dim
Min
Max
A
14.60
15.40
B
9.70
10.30
C
2.55
2.85
D
3.56
4.16
E
13.00
13.80
F
0.30
0.90
G
3.00 Ø
3.50 Ø
H
6.30
6.90
I
4.20
4.80
J
2.50
2.90
K
0.36
0.80
L
2.90
3.30
P
2.29
2.79
All Dimensions in mm


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