SI4410DY datasheet(1/8 Pages) IRF

No de pièce	SI4410DY

Description	HEXFET Power MOSFET

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Fabricant	IRF [International Rectifier]

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Parameter

Max.

Units

VDS

Drain- Source Voltage

30

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

±10

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

±8.0

A

IDM

Pulsed Drain Current

±50

PD @TA = 25°C

Power Dissipation

2.5

PD @TA = 70°C

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

EAS

Single Pulse Avalanche Energy

400

mJ

VGS

Gate-to-Source Voltage

± 20

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

l N-Channel MOSFET

l Low On-Resistance

l Low Gate Charge

l Surface Mount

l Logic Level Drive

11/22/99

Si4410DY

HEXFET® Power MOSFET

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

50

°C/W

Thermal Resistance

This N-channel HEXFET® Power MOSFET is produced

using International Rectifier's advanced HEXFET power

MOSFET technology. The low on-resistance and low gate

charge inherent to this technology make this device ideal

for low voltage or battery driven power conversion

applications

The SO-8 package with copper leadframe offers enhanced

thermal characteristics that allow power dissipation of

greater that 800mW in typical board mount applications.

VDSS = 30V

RDS(on) = 0.0135Ω

Description

To p V ie w

8

1

2

3

4

5

6

7

D

G

S

A

S

A

Absolute Maximum Ratings

W

www.irf.com

1

PD - 91853C

SO-8

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