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SI4416DY Fiches technique(PDF) 7 Page - NXP Semiconductors |
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SI4416DY Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 13 page Philips Semiconductors Si4416DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 05 June 2001 7 of 13 9397 750 08299 © Philips Electronics N.V. 2001. All rights reserved. ID = 250 µA; VDS =VGS Tj =25 °C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C and 150 °C; VDS > ID xRDSon VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa33 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( oC) VGS(th) (V) max typ min 03aa36 10-6 10-5 10-4 10-3 10-2 10-1 0 0.5 1 1.5 2 2.5 3 VGS (V) ID (A) max typ min 03af24 0 10 20 30 40 0 1020 304050 ID (A) gfs (S) Tj = 25 ºC 150 ºC VDS > ID X RDSon 03af26 102 103 10-1 1 10 102 VDS (V) Ciss, Coss, Crss (pF) Ciss Coss Crss 104 |
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