1 / 5 page
GSS4953
Page: 1/5
ISSUED DATE :2006/01/19
REVISED DATE :2006/11/09D
G
G S
S S
S 44995533
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±16
V
Continuous Drain Current1
ID @TA=25 :
-5
A
Continuous Drain Current1
ID @TA=70 :
-4
A
Pulsed Drain Current2
IDM
-20
A
Total Power Dissipation1
PD @TA=25 :
2
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient1
Max.
Rthj-amb
62.5
/
: W
BVDSS
-30V
RDS(ON)
53m
ID
-5A
Pb Free Plating Product