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H30D05C Fiches technique(PDF) 1 Page - Won-Top Electronics

No de pièce H30D05C
Description  30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
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Fabricant  WTE [Won-Top Electronics]
Site Internet  http://www.wontop.com
Logo WTE - Won-Top Electronics

H30D05C Fiches technique(HTML) 1 Page - Won-Top Electronics

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H30D05C – H30D60C
1 of 4
© 2006 Won-Top Electronics
Pb
H30D05C – H30D60C
30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
Features
!
Glass Passivated Die Construction
H
!
Ultra-Fast Switching
!
Low Forward Voltage Drop
!
Low Reverse Leakage Current
S
J
!
High Surge Current Capability
!
Plastic Material has UL Flammability
R
K
Classification 94V-O
PIN1
2
3
                L
P
Mechanical Data
N
!
Case: TO-3P, Molded Plastic
!
Terminals: Plated Leads Solderable per
M
MIL-STD-750, Method 2026
A
!
Polarity: See Diagram
B
!
Weight: 5.6 grams (approx.)
!
Mounting Position: Any
!
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
C
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
+
G
D
PIN 3 -
Case, PIN 2
E
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
H30D
05C
H30D
10C
H30D
15C
H30D
20C
H30D
30C
H30D
40C
H30D
50C
H30D
60C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
300
400
500
600
V
RMS Reverse Voltage
VR(RMS)
35
70
105
140
210
280
350
420
V
Average Rectified Output Current
@TC = 100°C
IO
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
300
A
Forward Voltage
@IF = 15A
VFM
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 125°C
IRM
10
500
µA
Reverse Recovery Time (Note 1)
trr
50
75
100
nS
Typical Junction Capacitance (Note 2)
Cj
175
145
pF
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.70
5.30
C
23.00
D
19.00
E
2.80
3.20
G
0.45
0.85
H
16.20
J
1.70
2.70
K
3.15 Ø
3.65 Ø
L
—4.50
M
5.25
5.65
N
1.10
1.40
P
—2.50
R
11.70
12.70
S
5.00
6.00
All Dimensions in mm


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