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ER1000CT Fiches technique(PDF) 1 Page - Won-Top Electronics

No de pièce ER1000CT
Description  10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER
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Fabricant  WTE [Won-Top Electronics]
Site Internet  http://www.wontop.com
Logo WTE - Won-Top Electronics

ER1000CT Fiches technique(HTML) 1 Page - Won-Top Electronics

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ER1000CT – ER1006CT
1 of 4
© 2006 Won-Top Electronics
Pb
ER1000CT – ER1006CT
10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER
Features
!
Glass Passivated Die Construction
B
!
Super-Fast Switching
!
Low Forward Voltage Drop
C
!
Low Reverse Leakage Current
!
High Surge Current Capability
G
A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1
2
3
                D
Mechanical Data
F
E
!
Case: TO-220, Molded Plastic
!
Terminals: Plated Leads Solderable per
P
MIL-STD-202, Method 208
!
Polarity: See Diagram
I
!
Weight: 2.24 grams (approx.)
!
Mounting Position: Any
H
L
!
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
+
J
PIN 3 -
Case, PIN 2
K
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
ER
1000CT
ER
1001CT
ER
1001ACT
ER
1002CT
ER
1003CT
ER
1004CT
ER
1006CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
RMS Reverse Voltage
VR(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current
@TC = 100°C
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 5.0A
VFM
0.95
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 125°C
IRM
10
400
µA
Reverse Recovery Time (Note 1)
trr
35
50
nS
Typical Junction Capacitance (Note 2)
Cj
80
50
pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
TO-220
Dim
Min
Max
A
13.90
15.90
B
9.80
10.70
C
2.54
3.43
D
3.56
4.56
E
12.70
14.73
F
0.51
0.96
G
3.55 Ø
4.09 Ø
H
5.75
6.85
I
4.16
5.00
J
2.03
2.92
K
0.30
0.65
L
1.14
1.40
P
2.29
2.79
All Dimensions in mm


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