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BF1210 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BF1210 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 2 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET 1.4 Quick reference data [1] Tsp is the temperature at the soldering point of the source lead. [2] Calculated from S-parameters. 2. Pinning information 3. Ordering information Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 6 V ID drain current DC - - 30 mA Ptot total power dissipation Tsp ≤ 107 °C [1] - - 180 mW |yfs| forward transfer admittance amplifier A; ID =19mA 26 31 41 mS amplifier B; ID =13mA 28 33 43 mS Ciss(G1) input capacitance at gate1 f = 100 MHz [2] amplifier A - 2.2 2.7 pF amplifier B - 1.9 2.4 pF Crss reverse transfer capacitance f = 100 MHz [2] -20 - fF NF noise figure amplifier A; f = 400 MHz - 0.9 1.5 dB amplifier B; f = 800 MHz - 1.2 1.9 dB Xmod cross modulation input level for k = 1 % at 40 dB AGC amplifier A 100 105 - dB µV amplifier B 100 103 - dB µV Tj junction temperature - - 150 °C Table 2. Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 2 gate2 3 gate1 (AMP B) 4 drain (AMP B) 5 source 6 drain (AMP A) 13 2 4 5 6 sym119 AMP A DA S DB G1A G2 G1B AMP B Table 3. Ordering information Type number Package Name Description Version BF1210 - plastic surface-mounted package; 6 leads SOT363 |
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