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PZTA56 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PZTA56
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PZTA56 Fiches technique(HTML) 3 Page - NXP Semiconductors

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1997 Apr 01
3
Philips Semiconductors
Product specification
PNP general purpose transistor
PZTA56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General part of handbook SC04”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−80
V
VCEO
collector-emitter voltage
open base
−−80
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−500
mA
ICM
peak collector current
−−1A
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
103
K/W
Rth j-s
thermal resistance from junction to soldering point
22
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −80 V
−−50
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−50
nA
hFE
DC current gain
IC = −10 mA; VCE = −1 V
100
IC = −100 mA; VCE = −1 V
100
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −10 mA
−−250
mV
VBE
base-emitter voltage
IC = −100 mA; VCE = −1V
−−1.2
V
fT
transition frequency
IC = −100 mA; VCE = −1 V; f = 100 MHz
50
MHz


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