1999 Apr 14

2

Philips Semiconductors

Product specification

NPN Darlington transistor

PZTA14

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 30 V).

APPLICATIONS

• Pre-amplifiers requiring high input impedance.

DESCRIPTION

NPN Darlington transistor in a SOT223 plastic package.

PNP complement: PZTA64.

PINNING

PIN

DESCRIPTION

1

base/input

2, 4

collector/output

3

emitter/ground

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

13

2

4

MAM319

TR2

2, 4

3

Top view

1

TR1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

30

V

collector-emitter voltage

−

30

V

emitter-base voltage

open collector

−

10

V

collector current (DC)

−

500

mA

peak collector current

−

800

mA

base current (DC)

−

200

mA

total power dissipation

−

1.25

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C