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PMSTA92 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PMSTA92
Description  PNP high-voltage transistors
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMSTA92 Fiches technique(HTML) 2 Page - NXP Semiconductors

  PMSTA92 Datasheet HTML 1Page - NXP Semiconductors PMSTA92 Datasheet HTML 2Page - NXP Semiconductors PMSTA92 Datasheet HTML 3Page - NXP Semiconductors PMSTA92 Datasheet HTML 4Page - NXP Semiconductors PMSTA92 Datasheet HTML 5Page - NXP Semiconductors PMSTA92 Datasheet HTML 6Page - NXP Semiconductors PMSTA92 Datasheet HTML 7Page - NXP Semiconductors PMSTA92 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Jun 01
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
PMSTA92; PMSTA93
FEATURES
• High voltage.
APPLICATIONS
• High voltage switching in telephony.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: PMSTA42 and PMSTA43.
MARKING
Note
1.
∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PMSTA92
∗2D
PMSTA93
∗2E
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
PMSTA92
−−300
V
PMSTA93
−−200
V
VCEO
collector-emitter voltage
open base
PMSTA92
−−300
V
PMSTA93
−−200
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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