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PIMT1 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce PIMT1
Description  PNP general purpose double transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PIMT1 Fiches technique(HTML) 3 Page - NXP Semiconductors

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2001 Oct 22
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
PIMT1
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
ICBO
collector-base cut-off current
VCB = −30 V; IE =0
−−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C
−−10
µA
IEBO
emitter-base cut-off current
VEB = −4 V; IC =0
−−100
nA
hFE
DC current gain
VCE = −6 V; IC = −1 mA
120
VCEsat
collector-emitter saturation
voltage
IC = −50 mA; IB = −5 mA; note 1
−−200
mV
Cc
collector capacitance
VCB = −12 V; IE =Ie = 0; f = 1 MHz
2.2
pF
fT
transition frequency
VCE = −12 V; IC = −2 mA;
f = 100 MHz
100
MHz


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