Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

PIMT1 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PIMT1
Description  PNP general purpose double transistor
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PIMT1 Fiches technique(HTML) 2 Page - NXP Semiconductors

  PIMT1 Datasheet HTML 1Page - NXP Semiconductors PIMT1 Datasheet HTML 2Page - NXP Semiconductors PIMT1 Datasheet HTML 3Page - NXP Semiconductors PIMT1 Datasheet HTML 4Page - NXP Semiconductors PIMT1 Datasheet HTML 5Page - NXP Semiconductors PIMT1 Datasheet HTML 6Page - NXP Semiconductors PIMT1 Datasheet HTML 7Page - NXP Semiconductors PIMT1 Datasheet HTML 8Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
2001 Oct 22
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
PIMT1
FEATURES
• 600 mW total power dissipation
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Reduces number of components and required
PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in an SC-74 (SOT457) plastic
package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
PIMT1
M1
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MAM457
13
2
TR1
TR2
6
4
5
Top view
12
3
65
4
Fig.1
Simplified outline (SC74; SOT457) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base
−−40
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
600
mW


Html Pages

1  2  3  4  5  6  7  8 


Fiches technique Télécharger

Go To PDF Page

Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
BCV62 PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
PUMT1 PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
BCV64B PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
BC857BV PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
PEMT1 PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
BC856S PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
BC857BS PNP general purpose double transistor 1  2  3  4  5  More NXP Semiconductors
2N4234 GENERAL PURPOSE TRANSISTOR PNP SILICON 1  2  3  4  5  Boca Semiconductor Corporation
2N5401C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE 1  2  KEC(Korea Electronics)
BC807 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE SWITCHING 1  2  KEC(Korea Electronics)

Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn