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CDBU42 Fiches technique(PDF) 1 Page - Comchip Technology |
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CDBU42 Fiches technique(HTML) 1 Page - Comchip Technology |
1 / 2 page Symbol Typ Parameter Conditions Min Max Unit Forward voltage CDBU42/43 CDBU42 CDBU43 CDBU42 CDBU43 IF = 10mA IF = 200mA IF = 50mA IF = 2mA IF = 15mA VF V 0.4 1 0.65 0.33 0.45 Reverse current Capacitance between terminals Reverse recovery time VR = 25V f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 ohm IR CT Trr uA pF nS 5 10 0.5 Io = 200 mA VR = 30 Volt s CDBU42/43 SMD Schottky Barrier Diode SMD Schottky Barrier Diode (RoHs Device) SMD Diodes Specialist COMCHIP QW-A1043 0.071(1.80) 0.063(1.60) 0.014(0.35) Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) 0603(1608) 0.012 (0.30) Typ. 0.018(0.45) Typ. Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Page 1 REV:A Typ IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Parameter Conditions Min Max Unit RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 4 0.5 200 21 30 30 TSTG Tj Storage temperature Junction temperature OC OC +125 +125 -55 PD Power dissipation Thermal resistance junction to ambient air mW OC/W 150 667 R JA |
Numéro de pièce similaire - CDBU42 |
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Description similaire - CDBU42 |
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