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BSP41 Fiches technique(PDF) 1 Page - Zetex Semiconductors

No de pièce BSP41
Description  SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
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BSP41 Fiches technique(HTML) 1 Page - Zetex Semiconductors

  BSP41 Datasheet HTML 1Page - Zetex Semiconductors  
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – NOVEMBER 1995 7
COMPLEMENTARY TYPES – BSP43 - BSP33
BSP41 - BSP31
PARTMARKING DETAIL
– DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSP41
BSP43
UNIT
Collector-Base Voltage
VCBO
70
90
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
1A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
BSP43
Breakdown Voltage BSP41
V(BR)CBO
90
70
V
IC=100µA
Collector-Emitter
BSP43
Breakdown Voltage BSP41
V(BR)CEO
80
60
VIC=10mA *
Emitter-Base Breakdown Voltage V(BR)EBO
5V
IE=10µA
Collector Cut-Off Current
ICBO
100
50
nA
µ
A
VCB=60V
VCB=60V, Tamb =125°C
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.5
V
V
IC =150mA, IB =15mA
IC =500mA, IB =50mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
1.2
V
V
IC =150mA, IB=15mA
IC =500mA, IB =50mA
Static Forward
Current Transfer Ratio
hFE
30
100
50
300
IC =100µA, VCE=5V
IC =100mA, VCE=5V
IC =500mA, VCE=5V
Collector Capacitance
Cc
12
pF
VCB=10V, f=1MHz
Emitter Capacitance
Ce
90
pF
VEB=0.5V, f=1MHz
Transition Frequency
fT
100
MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Ton
250
ns
VCC=20V, IC =100mA
IB1=IB2=5mA
Turn-Off Time
Toff
1000
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
BSP41
BSP43
C
C
E
B
3 - 64


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