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FXT38C Fiches technique(PDF) 1 Page - Zetex Semiconductors

No de pièce FXT38C
Description  NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FXT38C Fiches technique(HTML) 1 Page - Zetex Semiconductors

  FXT38C Datasheet HTML 1Page - Zetex Semiconductors  
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NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 1 – SEPT 93
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
800
mA
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
80
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
100
nA
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
V
IC=800mA, IB=8mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
FXT38C
3-29
B
C
E


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